nvtfs4824n ON Semiconductor, nvtfs4824n Datasheet - Page 4

• Manufacturer Part Number: nvtfs4824n
• Description: Nvtfs4824n Power Mosfet
• Manufacturer: ON Semiconductor

2500
2000
1500
1000
1000
1000
0.01
500
100
100
0.1
10
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
0
1
1
0.1
0
1
Figure 9. Resistive Switching Time Variation
V
Single Pulse
T
Figure 11. Maximum Rated Forward Biased
C
V
I
V
GS
C
D
rss
DD
GS
= 25°C
= 23 A
= 4.5 V
V
= 15 V
= 4.5 V
DS
Figure 7. Capacitance Variation
1 ms
, DRAIN−TO−SOURCE VOLTAGE (V)
t
t
f
r
R
R
Thermal Limit
Package Limit
G
DS(on)
Safe Operating Area
vs. Gate Resistance
, GATE RESISTANCE (W)
10
1
Limit
10
20
10
t
TYPICAL CHARACTERISTICS
d(off)
C
C
iss
oss
V
T
GS
J
= 25°C
http://onsemi.com
= 0 V
10 ms
100 ms
10 ms
dc
t
d(on)
100
100
30
4
10
60
40
20
75
50
25
8
6
4
2
0
0
0
0.40
25
0
Figure 10. Diode Forward Voltage vs. Current
V
T
Q
Figure 8. Gate−to−Source Voltage vs. Total
Figure 12. Maximum Avalanche Energy vs.
J
GS
T
gs
= 25°C
J
, STARTING JUNCTION TEMPERATURE(°C)
V
= 0 V
50
SD
0.50
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
Q
Q
g
gd
, TOTAL GATE CHARGE (nC)
75
10
0.60
Charge
Q
T
100
0.70
125
20
0.80
I
T
I
D
D
150
J
= 23 A
= 38 A
= 25°C
0.90
175
30