buk9540-100a NXP Semiconductors, buk9540-100a Datasheet - Page 6

• Manufacturer Part Number: buk9540-100a
• Description: Buk95/9640-100a Trenchmos Tm Logic Level Fet
• Manufacturer: NXP Semiconductors

Philips Semiconductors
Table 5:
T
9397 750 09162
Product data
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified.
T
T
j
j
R DSon
= 25 C; t
= 25 C
I D
(A)
(m )
function of drain-source voltage; typical values.
of drain current; typical values.
120
100
50
45
40
35
30
25
20
80
60
40
20
Characteristics
0
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
10
0
p
= 300 s
20
2
4.0
30
5.0
4
…continued
V GS = 10 (V)
40
V GS = 3.0 (V)
6
50
8
60
V DS (V)
3.0
2.4
I D (A)
Conditions
I
Figure 15
I
V
03na66
3.2
3.4
3.6
4.0
5.0
S
S
03na67
10
GS
= 25 A; V
= 37 A; dI
10
70
= 10 V; V
Rev. 03 — 08 February 2002
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
a
j
R DSon
= 25 C; I
a
=
(m )
of gate-source voltage; typical values.
factor as a function of junction temperature.
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
34
32
30
28
26
24
2
1
0
---------------------------- -
R
-60
DSon 25 C
0
R
DSon
D
Min
-
-
-
-20
= 25 A
BUK95/9640-100A
20
5
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
0.85
60
240
60
100
10
V GS (V)
140
Max
1.2
-
-
T j (ºC)
03na64
03ng41
180
15
Unit
V
ns
nC
6 of 14