buk9226-100b NXP Semiconductors, buk9226-100b Datasheet - Page 2
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buk9226-100b
Manufacturer Part Number
buk9226-100b
Description
Buk9226-100b Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9226-100B.pdf
(10 pages)
Philips Semiconductors
3. Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 10803
Objective data
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
DR
DRM
DS
DGR
GS
tot
stg
j
DS(AL)S
Limiting values
Parameter
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive avalanche energy
Rev. 01 — 10 December 2002
Conditions
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
R
R
mb
mb
mb
mb
mb
mb
DS
GS
GS
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 50 ; starting T
= 20 k
100 V; V
and
Figure 1
3
GS
GS
GS
= 5 V;
= 5 V;
= 5 V;
p
p
j
= 25 C
10 s;
10 s
Figure 2
D
= 75 A;
BUK9226-100B
TrenchMOS™ logic level FET
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Min
-
-
-
-
-
-
-
-
-
-
55
55
Max
100
100
48
34
192
150
+175
+175
48
192
147
15
Unit
V
V
V
A
A
A
W
A
A
mJ
C
C
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