buk9832 NXP Semiconductors, buk9832 Datasheet - Page 6
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buk9832
Manufacturer Part Number
buk9832
Description
Buk9832-55a Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet
1.BUK9832.pdf
(13 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
buk9832-55A
Manufacturer:
NXP
Quantity:
30 000
Part Number:
buk9832-55A
Manufacturer:
NXP/恩智浦
Quantity:
20 000
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Part Number:
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Quantity:
6 444
Table 5:
T
Philips Semiconductors
9397 750 07734
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
I D
(m )
(A)
R DSon
Characteristics
90
80
70
60
50
40
30
20
10
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
80
70
60
50
40
30
20
10
0
0
V GS (V) = 10
0
V GS (V) = 3 3.2 3.4
2
7
6
20
…continued
4
40
3.6
6
3.8
4
8
60
V DS (V)
Conditions
I
Figure 15
I
V
S
S
I D (A)
GS
= 18 A; V
= 20 A; dI
10
= 10 V; V
5
5
4
3
2.2
Rev. 01 — 31 January 2001
80
GS
S
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
--------------------------- -
R
R DSon
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
DSon 25 C
(m )
2
1
0
R
35
30
25
20
-60
DSon
2
D
Min
= 15 A
-20
4
20
TrenchMOS™ logic level FET
BUK9832-55A
Typ
0.85
51
80
60
6
© Philips Electronics N.V. 2001. All rights reserved.
100
8
140
Max
1.2
T
V GS (V)
j
( o C)
03nc24
180
10
Unit
V
ns
nC
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