buk9728 NXP Semiconductors, buk9728 Datasheet - Page 2

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buk9728

Manufacturer Part Number
buk9728
Description
Buk9728-55a N-channel Trenchmos Tm Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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Part Number
Manufacturer
Quantity
Price
Part Number:
buk9728-55A
Manufacturer:
NXP
Quantity:
12 500
Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 13326
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
D
DM
DR
DRM
j
stg
j
DS
tot
DS
DGR
GS
GSM
tot
DS(AL)S
DSon
I
DM
is limited by chip, not package.
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
peak reverse drain current
non-repetitive drain-source avalanche
energy
Quick reference data
Limiting values
Conditions
T
T
T
T
Conditions
t
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
Rev. 02 — 10 June 2004
R
p
mb
mb
j
j
mb
mb
mb
mb
mb
mb
DS
GS
= 25 C; V
= 25 C; V
50 s
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 20 k
55 V; V
and
j
= 25 C
GS
GS
Figure 1
3
GS
GS
GS
= 5 V; I
= 4.5 V; I
GS
= 5 V; R
= 5 V
= 5 V;
= 5 V;
p
p
D
= 15 A
D
GS
10 s;
10 s
Figure 2
N-channel TrenchMOS™ logic level FET
= 15 A
D
= 50 ;
= 22 A;
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
[1]
BUK9728-55A
Typ
-
-
-
-
23
-
Min
-
-
-
-
-
-
-
-
-
-
-
55
55
Max
55
22
26
150
28
30
Max
55
55
22
16
90
26
+150
+150
22
90
180
10
15
Unit
V
A
W
m
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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