buk9907 NXP Semiconductors, buk9907 Datasheet

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buk9907

Manufacturer Part Number
buk9907
Description
Buk9907-40atc Trenchplus Logic Level Fet
Manufacturer
NXP Semiconductors
Datasheet

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buk9907-40ATC
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buk9907-40ATC
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buk9907-55ATE
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1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
Pin
1
2
3
4
5
mb
Description
gate (g)
anode (a)
drain (d)
cathode (k)
source (s)
mounting base;
connected to drain (d)
Pinning - SOT263B simplified outline and symbol
M3D745
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS
diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature
sensing.
Product availability:
BUK9907-40ATC in SOT263B.
BUK9907-40ATC
TrenchPLUS logic level FET
Rev. 01 — 28 January 2002
Typical on-state resistance 5.8 m
Q101 compliant
ESD and overvoltage protection
Monolithically integrated temperature sensor for overload protection.
Automotive and power switching:
12 V and 24 V high power motor drives (e.g. Electrical Power Assisted
Steering (EPAS))
Protected drive for lamps.
Simplified outline
1
SOT263B
mb
5
MBL263
Symbol
g
MBL306
d
s
Product data
a
k

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buk9907 Summary of contents

Page 1

... N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance and TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. Product availability: BUK9907-40ATC in SOT263B. 2. Features Typical on-state resistance 5.8 m Q101 compliant ESD and overvoltage protection Monolithically integrated temperature sensor for overload protection ...

Page 2

... T junction temperature j R drain-source on-state resistance DSon V temperature sense diode forward F voltage S temperature sense diode temperature F coefficient 9397 750 09139 Product data BUK9907-40ATC Conditions mA GS(CL ...

Page 3

... DS(CL)S clamping energy Electrostatic Discharge V electrostatic discharge voltage; esd pins 1,3,5 [1] Voltage is limited by clamping [2] Current is limited by power dissipation chip rating [3] Continuous current is limited by package. 9397 750 09139 Product data BUK9907-40ATC Conditions I = 250 Figure 2 and 100 ...

Page 4

... T mb (º Fig 2. Continuous drain current as a function of mounting base temperature Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET 03ne74 Capped due to package 50 75 100 125 150 175 200 µs 100 µ ...

Page 5

... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 09139 Product data Conditions vertical in still air Figure Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET Min Typ Max Unit - - 60 K 0.55 ...

Page 6

... 1 measured from upper edge - of drain mounting base to centre of die measured from source lead - to source bond pad Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET Typ Max Unit - - 1 2.3 V 0.1 100 A - 250 ...

Page 7

... Product data Conditions Min Figure /dt = 100 Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET Typ Max Unit 0.85 1 250 - nC © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 8

... ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET 03ne79 ( 03ne89 - 120 180 T j (ºC) R DSon DSon 25 C © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 9

... MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET 03na18 I D (A) min typ max 0 0.5 1 1 (V) ...

Page 10

... Fig 16. Drain-source clamping voltage as a function of gate current; typical values. Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET 03ne87 100 120 Q G (nC 03ne83 -55 º º ...

Page 11

... 175 º º 0.0 0.5 1 (V) Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET max typ min 650 655 660 665 670 675 V F (mV 250 A F 03ne88 1.5 © ...

Page 12

... scale ( 6.4 10.3 15.0 2.4 0.5 1.7 5.9 9.7 13.5 1.6 REFERENCES JEDEC EIAJ 5-lead TO-220 Rev. 01 — 28 January 2002 BUK9907-40ATC TrenchPLUS logic level FET mounting base 0.8 3.8 4.3 3.0 2.6 0.4 0.6 3.6 4.1 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 01-01-11 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 13

... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20020128 - Product data; initial version 9397 750 09139 Product data BUK9907-40ATC Rev. 01 — 28 January 2002 TrenchPLUS logic level FET © Koninklijke Philips Electronics N.V. 2002. All rights reserved ...

Page 14

... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 28 January 2002 Rev. 01 — 28 January 2002 BUK9907-40ATC BUK9907-40ATC TrenchPLUS logic level FET TrenchPLUS logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2002. All rights reserved. © Koninklijke Philips Electronics N.V. 2002. All rights reserved. ...

Page 15

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 28 January 2002 Document order number: 9397 750 09139 BUK9907-40ATC TrenchPLUS logic level FET ...

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