tpcf8201 TOSHIBA Semiconductor CORPORATION, tpcf8201 Datasheet
tpcf8201
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tpcf8201 Summary of contents
Page 1
... 1.35 D (1) P 1.12 D (2) P 0.53 D (1) P 0.33 D (2) (Note 150 ch −55~150 T stg 1 TPCF8201 Unit JEDEC ― JEITA ― TOSHIBA 2-3U1B W Weight: 0.011 g (typ.) Circuit Configuration °C ° 2007-01-16 Unit ...
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... Unit R 92.6 th (ch-a) (1) (Note 3a) °C/W R 111.6 th (ch-a) (2) R 235.8 th (ch-a) (1) (Note 3a) °C/W R 378.8 th (ch-a) (2) Lot No. Product-specific code A line indicates lead (Pb)-free package or lead (Pb)-free finish. (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω 1 TPCF8201 FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) 2007-01-16 ...
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... Q g ∼ − 3 gs1 (Ta = 25°C) Symbol Test Condition ⎯ I DRP = 3 DSF TPCF8201 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 10 ⎯ 20 ⎯ 8 ⎯ 0.5 1.2 ⎯ 62 100 ⎯ ⎯ ...
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... Drain-source voltage 0.8 0.6 0.4 0.2 0. Gate-source voltage 1000 Common source Ta = 25°C Pulse test 100 0.1 4 TPCF8201 I – Common source Ta = 25°C 2.1 Pulse test 2 1.9 1.8 1.7 1 (V) V – Common source Ta = 25℃ Pulse test 1 ...
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... Common source 0 200μA Pulse test 0 −80 − 100 160 0 5 TPCF8201 I – 2.0 2 Common source Ta = 25°C Pulse test −0.8 −0.4 −1.2 V – 120 160 Ambient temperature Ta (°C) ...
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... Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) 100 Pulse width t w (s) 100 6 TPCF8201 (3) (2) (1) 100 1000 2007-01-16 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCF8201 20070701-EN 2007-01-16 ...