tpc6006-h TOSHIBA Semiconductor CORPORATION, tpc6006-h Datasheet - Page 4

• Manufacturer Part Number: tpc6006-h
• Description: Toshiba Field Effect Transistor Silicon N Channel Mos Type Ultra-high-speed U-mosiii
• Manufacturer: TOSHIBA Semiconductor CORPORATION

100
0.1
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
Common source
V DS = 10 V
Pulse test
10
8
4.5
6
Drain-source voltage V
Gate-source voltage V
4
0.2
1
Drain Current I
0.4
2
I
I
|Y
D
D
100
fs
– V
– V
3.8
25
| – I
1
DS
GS
D
Tc = −55°C
0.6
3.6
3
Tc = −55°C
D
25
100
GS
Common source
V DS = 10 V
Pulse test
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = 2.5 V
0.8
4
(V)
(V)
3.4
2.8
3.2
3
10
1
5
4
1000
100
0.5
0.4
0.3
0.2
0.1
10
10
8
6
4
2
0
0
0.1
0
0
6
Drain-source voltage V
Gate-source voltage V
10
4
2
8
5
Drain Current I
R
V
DS (ON)
4
I
DS
D
V GS = 4.5 V
3.8
Common source
Ta = 25°C Pulse test
– V
10
– V
1
10
0.9
DS
GS
– I
6
D
D
Common source
Ta = 25°C
Pulse test
I D = 3.9 A
1.9
GS
Common source
T a = 25°C
Pulse test
DS
(A)
15
V GS = 2.5 V
8
(V)
(V)
TPC6006-H
2007-12-20
3.6
3.4
2.8
3.2
3
10
20
10