tpc6104 TOSHIBA Semiconductor CORPORATION, tpc6104 Datasheet

tpc6104

Manufacturer Part Number

tpc6104

Description

Toshiba Field Effect Transistor Silicon P Channel Mos Type U-mosiii

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TPC6104.pdf (7 pages)

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Notebook PC Applications

Portable Equipment Applications

•

Absolute Maximum Ratings

Thermal Characteristics

Drain-source voltage

Drain-gate voltage (R

Gate-source voltage

Drain current

Drain power dissipation

Single pulse avalanche energy (Note 3)

Avalanche current

Repetitive avalanche energy

Channel temperature

Storage temperature range

Low drain-source ON resistance: R

High forward transfer admittance: |Y

Low leakage current: I

Enhancement mode: V

Note:

Thermal resistance, channel to ambient (t = 5 s)

Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.

This transistor is an electrostatic-sensitive device. Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)

Characteristics

Pulse

= 20 kΩ)

DSS

(Note 2a)

(Note 2b)

= −0.5 to −1.2 V

(Note 1)

(Note 4)

(Note 1)

(t = 5 s)

= −10 μA (max) (V

= −10 V, I

(Note 2b)

DS (ON)

(Note 2a)

(Ta = 25°C)

Symbol

= −200 μA)

DGR

GSS

DSS

| = 12 S (typ.)

stg

TPC6104

= 33 mΩ (typ.)

Symbol

th (ch-a)

= −20 V)

−55~150

Rating

−2.75

−5.5

0.22

−20

−22

150

2.2

0.7

4.9

±8

178.5

56.8

Max

Unit

°C

°C/W

Unit

Weight: 0.011 g (typ.)

JEDEC

JEITA

TOSHIBA

Circuit Configuration

2-3T1A

2006-11-16

TPC6104

―

Unit: mm

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