tpc6603 TOSHIBA Semiconductor CORPORATION, tpc6603 Datasheet - Page 2

• Manufacturer Part Number: tpc6603
• Description: Transistor Silicon Pnp Epitaxial Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Collector cutoff current
Emitter cutoff current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Switching time
Circuit configuration
(Top View)
Characteristic
6
1
Rise time
Storage time
Fall time
5
2
Figure 1. Switching Time Test Circuit
4
3
I
B1
(Ta = 25°C)
Duty cycle < 1%
20 μs
V
V
V
Symbol
h
h
(BR) CEO
CE (sat)
BE (sat)
I
I
FE
FE
CBO
C
EBO
t
stg
t
t
ob
r
f
(1)
(2)
I
B2
(or abbreviation code)
Input
V
V
I
V
V
I
I
V
See Figure 1 circuit diagram
V
I
C
C
C
B1
CB
EB
CE
CE
CB
CC
= −10 mA, I
= −1.6 A, I
= −1.6 A, I
2
= −I
= −7 V, I
I
I
= −30 V, I
= −2 V, I
= −2 V, I
= −10 V, I
∼ − −12 V, R
B1
B2
B2
Test Condition
= −53.3 mA
Part No.
B
B
C
C
C
V
B
E
E
Pin #1
= −53 mA
= −53 mA
= 0
= −0.5 A
= −1.6 A
CC
L
= 0
= 0
= 0, f = 1 MHz
= 7.5 Ω
Lot code (month)
Output
H3E
Lot code
(year)
Marking
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
Min
−20
200
100
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Product-specific code
Typ.
150
28
70
40
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2006-11-13
−0.19
−1.10
TPC6603
−100
−100
Max
500
⎯
⎯
⎯
⎯
⎯
⎯
Unit
nA
nA
pF
ns
V
V
V