tpc6901 TOSHIBA Semiconductor CORPORATION, tpc6901 Datasheet - Page 5

• Manufacturer Part Number: tpc6901
• Description: Toshiba Multi-chip Transistor Silicon Npn
• Manufacturer: TOSHIBA Semiconductor CORPORATION

PNP
0.001
−1.0
−0.8
−0.6
−0.4
−0.2
0.01
−1.0
−0.8
−0.6
−0.4
−0.2
0.1
10
0.001
0
1
0
0
0
Base−emitter saturation voltage V
Common emitter
β = 30
Single nonrepetitive pulse
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Collector−emitter voltage V
−100
−0.2
−0.2
Collector current −I
−0.4
0.01
−0.4
Ta = 100°C
25°C
V
Ta = 100°C
−50
CE (sat)
I
I
C
C
– V
−0.6
– V
−0.6
CE
BE
Single nonrepetitive pulse
– I
Common emitter
Ta = 25°C
−55°C
C
−0.8
−0.8
0.1
C
25°C
CE
(A)
I B = −1 mA
−1.0
−1.0
BE
−55°C
−30
−20
−15
−10
(V)
−40
−5
−2
(V)
−1.2
−1.2
1
5
10000
0.001
1000
0.01
100
0.1
0.1
10
0.001
10
0.001
10
1
1
1
0.1
*: Single nonrepetitive pulse
Note that the curves for 100 ms,
10 s and DC operation will be
different when the devices aren’t
mounted on an FR4 board (glass
epoxy, 1.6 mm thick, Cu area:
645 mm
Single-device operation
These characteristic curves must
be derated linearly with increase
in temperature.
I C max (Pulse)*
I C max (Continuous)*
Common emitter
V CE = −2 V
Single nonrepetitive pulse
Common emitter
β = 30
Single nonrepetitive pulse
Ta = 25°C
Collector−emitter voltage V
2
).
DC operation
Ta = 25°C
Collector current −I
Collector current −I
0.01
0.01
Safe operation area
1
V
25°C
Ta = −55°C
25°C
BE (sat)
10 s*
Ta = 100°C
h
FE
100 ms*
10 ms*
– I
– I
C
1 ms*
C
100°C
0.1
0.1
−55°C
C
C
10
V CEO max
(A)
(A)
100 μs*
CE
(V)
2006-11-13
TPC6901
10 μs*
1
1
100