tpcc8102 TOSHIBA Semiconductor CORPORATION, tpcc8102 Datasheet - Page 4

• Manufacturer Part Number: tpcc8102
• Description: Toshiba Field Effect Transistor Silicon P-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
−10
−30
−24
−18
−12
100
0.1
−8
−6
−4
−2
−6
10
−0.1
0
0
1
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−10
−8
Drain-source voltage V
Gate-source voltage V
−6
−0.2
−1
−5
−4.5
Drain current I
−4
Ta = −55°C
100
−1
−0.4
−2
⎪Y
I
I
D
D
Ta = −55°C
fs
– V
– V
100
⎪ – I
−3.2
25
DS
GS
−0.6
−3
D
D
25
−10
GS
DS
(A)
Common source
Ta = 25°C
Pulse test
V GS = −2.4 V
−0.8
−4
(V)
(V)
−2.6
−2.8
−3
−100
−1
−5
4
−0.8
−0.6
−0.4
−0.2
−20
−16
−12
100
−8
−4
−1
10
−0.1
0
0
1
0
0
Common source
Ta = 25°C
Pulse test
−10
−8
Drain-source voltage V
Gate-source voltage V
−6
−0.4
−2
−5
−4.5
Drain current I
−4
−1
−3.8
R
−0.8
V
−4
DS (ON)
I
DS
D
V GS = −4 V
– V
– V
−10
−7.5
DS
GS
−1.2
– I
−6
D
−3.4
D
−10
GS
I D = −15 A
DS
(A)
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
V GS = −2.4 V
−1.6
−8
(V)
(V)
TPCC8102
2009-08-06
−3.2
−2.6
−2.8
−3
−100
−10
−2