blf2022-70 NXP Semiconductors, blf2022-70 Datasheet - Page 3

• Manufacturer Part Number: blf2022-70
• Description: Uhf Power Ldmos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. T
Ruggedness in class-AB operation
The BLF2022-70 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under
the following conditions: V
2003 Feb 24
V
V
I
T
T
R
V
V
I
I
I
g
R
C
2-tone, class-AB
MODE OF OPERATION
D
j
DSS
DSX
GSS
fs
SYMBOL
stg
j
SYMBOL
SYMBOL
DS
GS
(BR)DSS
GSth
th j-h
= 25 C unless otherwise specified.
DSon
rs
UHF power LDMOS transistor
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
thermal resistance from junction to heatsink T
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
on-state drain current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
PARAMETER
DS
f
1
= 28 V; I
PARAMETER
= 2170; f
(MHz)
DQ
f
2
= 2170.1
= 500 mA; P
PARAMETER
V
V
V
V
V
V
V
V
GS
DS
GS
GS
GS
DS
GS
GS
L
V
= 65 W (CW); f = 2170 MHz.
(V)
28
h
DS
= 0; I
= 10 V; I
= 0; V
= V
= 15 V; V
= 10 V; I
= V
= 0; V
= 25 C; R
3
GSth
GSth
CONDITIONS
D
h
DS
DS
= 25 C; note 1
= 1.4 mA
+ 9 V; V
+ 9 V; I
D
D
= 26 V
= 26 V; f = 1 MHz
(mA)
500
I
= 140 mA
= 5 A
DS
DQ
th j-h
= 0
CONDITIONS
D
DS
= 1.15 K/W; unless otherwise specified.
= 5 A
65 (PEP)
= 10 V
(W)
P
L
65
4.4
18
MIN.
65
MIN.
(dB)
>11
G
p
4.2
0.15
3.4
TYP.
65
9
+150
200
1.15
BLF2022-70
Product specification
VALUE
15
MAX.
>30
(%)
D
5.5
10
25
MAX.
V
V
A
K/W
C
C
(dBc)
UNIT
UNIT
V
V
A
nA
S
pF
d
UNIT
A
im
25