blf278-01 NXP Semiconductors, blf278-01 Datasheet - Page 4

• Manufacturer Part Number: blf278-01
• Description: Vhf Push-pull Power Mos Transistor
• Manufacturer: NXP Semiconductors

Philips Semiconductors
CHARACTERISTICS
T
V
2003 Sep 19
Per transistor section
V
I
I
V
g
g
R
I
C
C
C
C
j
DSS
GSS
DSX
GS
fs
fs1
V
(BR)DSS
GSth
= 25 C unless otherwise specified.
DSon
is
os
rs
d-f
VHF push-pull power MOS transistor
SYMBOL
GS
/g
group indicator
GROUP
fs2
M
C
D
G
H
N
A
B
E
F
K
J
L
drain-source breakdown voltage V
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference
of both sections
forward transconductance
forward transconductance ratio
of both sections
drain-source on-state resistance V
drain cut-off current
input capacitance
output capacitance
feedback capacitance
drain-flange capacitance
PARAMETER
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
V
V
V
V
V
V
V
V
V
V
GS
GS
GS
DS
DS
DS
DS
GS
GS
GS
GS
GS
= 0; I
= 0; V
= 20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; V
= 0; V
= 0; V
= 0; V
4
CONDITIONS
D
DS
DS
DS
DS
= 100 mA
D
D
D
D
D
GROUP
= 50 V
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
= 50 V; f = 1 MHz
DS
= 50 mA
= 50 mA
= 5 A
= 5 A
= 5 A
DS
W
O
Q
R
U
P
S
T
V
X
Y
Z
= 10 V
= 0
125
2
4.5
0.9
MIN.
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
6.2
0.2
25
480
190
14
5.4
TYP.
LIMITS
(V)
Product Specification
2.5
1
4.5
100
1.1
0.3
MAX.
BLF278
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
V
mA
V
mV
S
A
pF
pF
pF
pF
UNIT
A