gfp60n03 Voltronics Corporation, gfp60n03 Datasheet

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gfp60n03

Manufacturer Part Number
gfp60n03
Description
N-channel Enhancement-mode Mosfet Neral Semiconductor
Manufacturer
Voltronics Corporation
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
GFP60N03
Manufacturer:
TAIWAN
Quantity:
230 000
0.160 (4.06)
0.205 (5.20)
0.190 (4.83)
0.09 (2.28)
*
*
May be notched or flat
Maximum Ratings and Thermal Characteristics
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Lead Temperature (1/8” from case for 5 sec.)
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
Notes: (1) Maximum DC current limited by the package
0.415 (10.54)
0.410 (10.41)
0.350 (8.89)
G
Max.
PIN
D
D
S
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.026 (0.66)
0.635 (16.13)
0.580 (14.73)
0.113 (2.87)
0.102 (2.56)
0.154 (3.91)
0.142 (3.60)
TO-220AB
1.148 (29.16)
1.118 (28.40)
(1)
Dia.
Dimensions in inches
0.155 (3.93)
0.134 (3.40)
and (millimeters)
0.022 (0.56)
0.014 (0.36)
0.360 (9.14)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
T
T
C
C
N-Channel Enhancement-Mode MOSFET
= 25°C
= 100°C
0.603 (15.32)
0.573 (14.55)
0.104 (2.64)
0.094 (2.39)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
Symbol
T
R
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
• Specially Designed for Low Voltage DC/DC
• Fast Switching for High Efficiency
Mechanical Data
Case: JEDEC TO-220AB molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Torque: 10 in-lbs maximum
Weight: 2.0g
J
R
V
V
I
P
, T
T
DM
I
On-Resistance
Converters
GS
DS
D
D
L
JC
JA
stg
(T
C
= 25°C unless otherwise noted)
V
G
DS
–55 to 150
30V R
Limit
62.5
62.5
±
100
275
2.0
30
60
25
20
GFP60N03
DS(ON)
D
S
11
m
°C/W
°C/W
Unit
°C
°C
W
V
A
I
D
5/1/01
60A

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gfp60n03 Summary of contents

Page 1

... High temperature soldering guaranteed: Dimensions in inches 250°C/10 seconds at terminals and (millimeters) Mounting Torque: 10 in-lbs maximum Weight: 2.0g Symbol 25° 100° GFP60N03 V 30V R DS DS(ON On-Resistance Converters (T = 25°C unless otherwise noted) C Limit 30 DS ± ...

Page 2

... iss 15V oss 1.0MH rss 25A, di/dt = 100A Switching R D Waveforms V D OUT Output, V DUT S GFP60N03 Min Typ Max 30 1.0 3.0 ±100 = 10V 60 = 30A 25A 0.9 1.3 =50A 10V ...

Page 3

... I = 250 A D 0.025 0.02 0.015 0.01 0.005 0 100 125 150 0 100 125 150 GFP60N03 Fig. 2 – Transfer Characteristics V = 10V 125 Gate-to-Source Voltage (V) GS Fig. 4 – On-Resistance vs. Drain Current Drain Current (A) ...

Page 4

... 30A 125 100 f = 1MH 0.1 0. GFP60N03 Fig. 7 – Gate Charge V = 15V 15A Charge (nC) g Fig. 9 – Source-Drain Diode Forward Voltage 125 --55 C 0.2 0.4 0.6 0 ...

Page 5

... A 1 0.1 0.01 75 100 125 150 0.0001 1000 Single Pulse R = 2.0 C 100 GFP60N03 Fig. 11 – Transient Thermal Impedance 1. Duty Cycle ( JC(norm 2 0.001 ...

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