gfp60n03 Voltronics Corporation, gfp60n03 Datasheet - Page 2

• Manufacturer Part Number: gfp60n03
• Description: N-channel Enhancement-mode Mosfet Neral Semiconductor
• Manufacturer: Voltronics Corporation

Electrical Characteristics
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Reverse Recovery Time
Note:
(1) Pulse test; pulse width
Test Circuit
Switching
(1)
V
GEN
R
300 s, duty cycle
G
(1)
V
(1)
IN
G
(1)
S
D
V
2%
DD
N-Channel Enhancement-Mode MOSFET
R
(T
D
J
= 25°C unless otherwise noted)
Symbol
R
V
BV
I
t
t
DUT
I
I
C
DS(on)
V
C
GS(th)
D(on)
Q
Q
C
d(on)
d(off)
GSS
DSS
Q
g
t
SD
t
t
oss
DSS
rss
iss
rr
fs
gs
gd
r
f
g
V
OUT
V
I
DS
F
V
V
V
V
V
V
V
V
I
DS
V
V
= 25A, di/dt = 100A/ s
DS
DS
D
I
GS
=15V, V
DS
DS
DD
GS
S
GS
DS
Test Condition
= 25A, V
= V
= 0V, V
= 15V, V
= 0V, I
= 30V, V
= 15V, R
1A, V
= 4.5V, I
= 10V, I
f = 1.0MH
= 10V, I
V
Waveforms
V
R
I
Switching
5V, V
DS
D
GS
GS
G
GS
= 50A
, I
= 6
= 15V
GEN
= 0V
D
GS
D
=5V, I
GS
GS
GS
D
D
Output, V
= 250 A
D
GS
L
= 250 A
= ±20V
= 25A
= 30A
= 10V
Input, V
= 15
Z
= 10V
= 25A
= 0V
= 10V
= 0V
D
=50A
t
d(on)
OUT
IN
10%
Min
1.0
30
60
–
–
–
t
on
50%
10%
t
PULSE WIDTH
r
90%
1850
Typ
315
145
160
GFP60N03
0.9
13
40
16
35
11
11
48
15
9
8
6
t
d(off)
±100
Max
3.0
1.3
50%
16
22
60
20
20
80
30
11
1
–
–
–
90%
t
off
10%
90 %
t
INVERTED
Unit
f
m
nC
nA
pF
ns
ns
V
A
S
V
A