dmg6602svt Diodes, Inc., dmg6602svt Datasheet - Page 3

• Manufacturer Part Number: dmg6602svt
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

Electrical Characteristics – Q2
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
Total Gate Charge (V
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
DMG6602SVT
Document number: DS35159 Rev. 1 - 2
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to production testing.
GS
GS
Characteristic
= -4.5V)
= -10V)
@ T
A
= 25°C unless otherwise stated
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
|Y
V
C
C
GS(th)
Q
Q
D(on)
D(off)
GSS
DSS
R
Q
Q
t
SD
oss
t
DSS
iss
rss
gd
fs
gs
r
f
g
g
g
|
www.diodes.com
Min
-1.0
-30
3 of 9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
17.1
Typ
-0.8
350
0.9
1.2
4.8
7.3
73
99
50
45
20
13
6
4
7
-
-
-
-
±100
Max
-1.0
-3.0
140
-1.0
420
100
95
80
6
9
-
-
-
-
-
-
-
-
-
Unit
mΩ
µA
nC
nA
pF
ns
V
V
S
V
Ω
V
V
V
V
V
V
V
V
V
f = 1.2MHz
V
V
V
V
R
GS
DS
GS
DS
GS
GS
DS
GS
DS
DS
DS
DS
GS
G
= 6Ω, R
= -24V, V
= V
= -5V, I
= -15V, V
= 0V, V
= -15V, V
= -15V, V
= 0V, I
= ±20V, V
= -10V, I
= -4.5V, I
= 0V, I
= -10V, V
GS
Test Condition
, I
DMG6602SVT
D
S
L
D
GS
D
= -250μA
= -1A
= 15Ω
D
= -2.7A
GS
D
GS
GS
GS
= -250μA
DS
DS
= -2.7A
= 0V, f = 1MHz
= -2A
= 0V
= 0V,
= -4.5V, I
= -10V, I
= -15V,
= 0V
© Diodes Incorporated
August 2011
D
D
= -3A
= -3A