dmg6602svt Diodes, Inc., dmg6602svt Datasheet - Page 5

• Manufacturer Part Number: dmg6602svt
• Description: Complementary Pair Enhancement Mode Mosfet
• Manufacturer: Diodes, Inc.

DMG6602SVT
Document number: DS35159 Rev. 1 - 2
1000
2.4
1.6
1.2
0.8
0.4
100
10
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
2
0
10
8
6
4
2
0
-50
0
0
V
DS
-25
=10V, I =3.0A
C
OSS
Fig. 11 Gate Charge Characteristics
T , JUNCTION TEMPERATURE ( C)
V , DRAIN-SOURCE VOLTAGE (V)
J
Fig. 9 Typical Junction Capacitance
2
5
DS
Ave (pF)
D
0
10
25
4
Q -(nC)
G
50
15
6
75
I = 250 A
D
I = 1mA
D
20
100
μ
C
C
ISS
RSS
8
f = 1MHz
°
Ave (pF)
Ave (pF)
25
125 150
Q1 N-CHANNEL
10
30
www.diodes.com
5 of 9
10,000
1,000
100
0.1
10
10
Fig. 10 Typical Drain-Source Leakage Current vs. Voltage
8
6
4
2
0
1
0
0
2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Fig. 8 Diode Forward Voltage vs. Current
0.2
V , SOURCE-DRAIN VOLTAGE (V)
V , DRAIN-SOURCE VOLTAGE (V)
SD
DS
0.4
V
SD
(V) @ V
0.6
DS
=0V T = 25 C
T =
T = 150 C
A
A
A
85 C
0.8
DMG6602SVT
°
°
°
T =
1
A
© Diodes Incorporated
T =
A
-55 C
25 C
August 2011
°
°
1.2