2sk4034 TOSHIBA Semiconductor CORPORATION, 2sk4034 Datasheet

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2sk4034

Manufacturer Part Number
2sk4034
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type U-mos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
Switching Regulator, DC-DC Converter Applications
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON-resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Thermal resistance, channel to case
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: Using continuously under heavy loads (e.g. the application of high
This transistor is an electrostatic-sensitive device. Handle with care.
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.)
are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/”Derating
Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ)
= 25 V, T
Characteristics
GS
DC
Pulse(t ≤ 1 ms)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 78 μH, R
= 1.5 to 2.5 V (V
(Note 1)
(Note 2)
(Note 1)
= 100 μA (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DS
DGR
GSS
P
DSS
I
DP
AR
| = 110 S (typ.)
AS
AR
stg
D
ch
D
2SK4034
DS
= 60 V)
= 4.2 mΩ(typ.)
R
Symbol
= 10 V, I
th (ch-c)
−55 to 150
Rating
G
12.5
±20
300
125
322
150
D
60
60
75
75
1
= 25 Ω, I
= 1 mA)
Max
1.0
AR
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
= 75 A
V
V
V
A
A
Note: Use the S1 pin to return the gate
signal to source. Board traces should
be designed so the main current flows
to the S2 pin.
Weight: 0.74 g (typ.)
JEDEC
JEITA
TOSHIBA
1
2
2-9F1B
SC-97
2008-01-15
2SK4034
4
3
Unit: mm

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2sk4034 Summary of contents

Page 1

... T °C stg Symbol Max Unit R 1.0 °C/W th (ch- Ω 2SK4034 Unit: mm ⎯ JEDEC JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Use the S1 pin to return the gate signal to source. Board traces should be designed so the main current flows to the S2 pin ...

Page 2

... Test Condition DRP DRP = DS2F DR1 / A/μ 2SK4034 Min Typ. Max = 0 V ⎯ ⎯ ± ⎯ ⎯ 100 ⎯ ⎯ 60 ⎯ ⎯ 35 ⎯ 1.5 2.5 ⎯ 4.2 5.8 ⎯ 5.5 10 ⎯ 55 110 ⎯ ...

Page 3

... Drain-source voltage V 1 0.8 0.6 0.4 0 (V) Gate-source voltage V 100 Common source Tc=25℃ Pulse test 10 1 1000 1 3 2SK4034 I – Common source 5 4.75 4.5 Tc=25℃ Pulse test 4.25 4 3. – Common source Tc=25℃ Pulse test ...

Page 4

... C oss Common source =10V C rss I D =1mA Pulse test 0 −80 100 (V) Dynamic input/output characteristics 160 0 4 2SK4034 I – 0,−1 V −0.4 −0.8 −1.2 −1.6 −2 Drain-source voltage V ( – − ...

Page 5

... Pulse width t (S) w 400 300 200 100 0 25 Channel temperature (initial) Tch (°C) 100 Test circuit = 25 Ω μ 2SK4034 t T Duty = t (ch-c) = 1.0°C – 100 125 150 B VDSS Wave form ⎛ ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2SK4034 20070701-EN GENERAL 2008-01-15 ...

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