nvd5117pl ON Semiconductor, nvd5117pl Datasheet

nvd5117pl

Manufacturer Part Number

nvd5117pl

Description

Power Mosfet −60 V, 16 M, −61 A, Single P−channe

Manufacturer

ON Semiconductor

Datasheet

1.NVD5117PL.pdf (6 pages)

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NVD5117PL

Power MOSFET

−60 V, 16 mW, −61 A, Single P−Channel

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. The entire application environment impacts the thermal resistance values

2. Surface−mounted on FR4 board using a 650 mm

3. Maximum current for pulses as long as 1 second is higher but is dependent

MAXIMUM RATINGS

September, 2011 − Rev. 0

THERMAL RESISTANCE MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain Cur-

rent R

Power Dissipation R

(Note 1)

Continuous Drain Cur-

rent R

Power Dissipation R

(Notes 1 & 2)

Pulsed Drain Current

Current Limited by

Package (Note 3)

Operating Junction and Storage Temperature

Source Current (Body Diode)

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

L(pk)

Junction−to−Case − Steady State (Drain)

Junction−to−Ambient − Steady State (Note 2)

Compliant

Low R

High Current Capability

Avalanche Energy Specified

AEC−Q101 Qualified

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

shown, they are not constants and are only valid for the particular conditions

noted.

on pulse duration and duty cycle.

= 40 A, L = 0.3 mH, R

qJC

qJA

DS(on)

(Notes 1 & 2)

(Note 1)

= 25°C, V

to Minimize Conduction Losses

Parameter

qJC

qJA

= 50 V, V

Steady

State

= 25°C unless otherwise noted)

= 25 W)

= 25°C, t

= 25°C

= 10 V,

= 100°C

= 25°C

= 10 ms

Symbol

Dmaxpkg

, 2 oz. Cu pad.

, T

qJC

DSS

qJA

stg

Value

−55 to

Value

−419

"20

−118

1.3

−60

−61

−43

118

−11

175

240

260

4.1

2.1

−8

°C/W

Unit

°C

†For information on tape and reel specifications,

NVD5117PLT4G

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

(BR)DSS

−60 V

Device

ORDERING INFORMATION

5117L = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENT

http://onsemi.com

22 mW @ −4.5 V

16 mW @ −10 V

Gate

1 2

CASE 369C

= Year

= Work Week

= Pb−Free Package

(Pb−Free)

Package

STYLE 2

DPAK

Drain

Drain 3

DPAK

DS(on)

Publication Order Number:

Source

2500 / Tape &

P−Channel

Shipping

NVD5117PL/D

Reel

−61 A

†

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