nvd5117pl ON Semiconductor, nvd5117pl Datasheet - Page 3

• Manufacturer Part Number: nvd5117pl
• Description: Power Mosfet −60 V, 16 M, −61 A, Single P−channe
• Manufacturer: ON Semiconductor

0.065
0.055
0.045
0.035
0.025
0.015
0.005
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
120
100
80
60
40
20
0
−50
3
0
Figure 3. On−Resistance vs. Gate−to−Source
V
V
I
GS
GS
D
−25
Figure 5. On−Resistance Variation with
= −29 A
= −10 V
Figure 1. On−Region Characteristics
= −10 V
−V
−V
4
DS
GS
T
1
J
, DRAIN−TO−SOURCE VOLTAGE (V)
0
, JUNCTION TEMPERATURE (°C)
, GATE−TO−SOURCE VOLTAGE (V)
5
25
−4.5 V
Temperature
2
6
Voltage
50
75
7
3
−4.2 V
100
TYPICAL CHARACTERISTICS
8
I
125
T
D
T
J
4
= −29 A
J
= 25°C
−3.8 V
−3.6 V
−3.4 V
−3.2 V
= 25°C
http://onsemi.com
−4 V
−3 V
9
150
175
10
5
3
100000
10000
0.024
0.022
0.020
0.018
0.016
0.014
0.012
0.010
1000
120
100
100
80
60
40
20
0
10
5
2
Figure 4. On−Resistance vs. Drain Current and
T
Figure 6. Drain−to−Source Leakage Current
V
T
J
20
J
10
DS
V
= 125°C
= 25°C
GS
−V
−V
≥ −10 V
Figure 2. Transfer Characteristics
30
= 0 V
15
DS
GS
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
3
40
20
T
−I
J
D
= −55°C
V
, DRAIN CURRENT (A)
50
25
GS
Gate Voltage
T
vs. Voltage
J
= −4.5 V
= 150°C
60
30
T
T
J
4
J
= 25°C
70
= 125°C
35
V
GS
80
40
= −10 V
90
45
5
100 110 120
50
55
60
6