tpcm8006 TOSHIBA Semiconductor CORPORATION, tpcm8006 Datasheet - Page 6

• Manufacturer Part Number: tpcm8006
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type U-mos?
• Manufacturer: TOSHIBA Semiconductor CORPORATION

1000
100
1.5
0.5
2.5
0.1
10
3
2
1
0
1
0.1
0
* Single pulse Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
I D max (Pulse)
(2)
(1)
Drain−source voltage V
Ambient temperature Ta (
40
t = 10 ms
1000
100
Safe operating area
0.1
*
10
0.001
1
1
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc = 25°C
(1) Device mounted on a
(2) Device mounted on a
t = 10s
P
*
D
glass-epoxy board (a) (Note 2a)
glass-epoxy board (b) (Note 2b)
80
– Ta
1 ms
0.01
V DSS max
*
10
DS
120
°
C)
(V)
0.1
160
100
Pulse width t
r
th
6
− t
1
w
w
(s)
30
20
40
10
0
0
10
Case temperature Ta (
40
100
Single pulse
P
(2)
(1)
(3)
D
80
– Tc
1000
120
°
C)
TPCM8006
2008-05-23
160