tpcm8102 TOSHIBA Semiconductor CORPORATION, tpcm8102 Datasheet
tpcm8102
Related parts for tpcm8102
tpcm8102 Summary of contents
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... 2 1 − 1 150 °C ch −55 to 150 T °C stg 1 TPCM8102 Unit: mm 0.25±0.05 0.8 0. ＋ 0 0.2 － 0.2 0. 3.5±0.2 0. 2.75±0.2 0.8±0 1,2,3：SOURCE 4：GATE 5,6,7,8：DRAIN JEDEC ― JEITA ― TOSHIBA 2-4L1A Weight: 0.028 g (typ.) ...
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... Year of manufacture (The last digit of the year) Symbol Max R 4.17 °C/W th (ch-c) ( ° 54.3 °C/W th (ch-a) (Note 2a) R 125 °C/W th (ch-a) (Note 2b) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm Ω TPCM8102 Unit FR-4 25.4 × 25.4 × 0.8 (Unit: mm) (b) = − 2008-03-21 ...
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... − gs1 Q gd (Ta = 25°C) Symbol Test Condition ⎯ I DRP = − DSF TPCM8102 Min Typ. Max = 0 V ⎯ ⎯ ± 100 = 0 V ⎯ ⎯ − − 30 ⎯ ⎯ − 13 ⎯ ⎯ − 0.8 ⎯ ...
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... Gate − source voltage V 100 Common source Ta = 25°C Pulse test 10 1 −100 −0.1 Drain current I 4 TPCM8102 I – −3.4 −3.6 −3.8 Common source − 25°C −4.5 Pulse test −3.2 −3 −2 −2.6 V −0.8 − ...
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... C rss Common source −0 − −1mA Pulse test 0 −100 −80 −40 (V) Ambient temperature Ta ( −30 −25 −20 −15 −10 − 100 5 TPCM8102 I – −4 −3 − Common source Ta = 25°C Pulse test 0.2 0.4 0.6 0 – ...
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... V DSS max −0.1 −0.1 −1 −10 Drain − source voltage V DS − 0 Pulse width t ( 160 0 C) ° −100 (V) 6 TPCM8102 (2) (1) (3) Single pulse 100 1000 P – 120 160 Case temperature ° 2008-03-21 ...
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... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 7 TPCM8102 20070701-EN GENERAL 2008-03-21 ...