6am14 HITACHI, 6am14 Datasheet - Page 2

• Manufacturer Part Number: 6am14
• Description: Silicon N Channel / P Channel Power Mos Fet Array
• Manufacturer: HITACHI

Table 2 Electrical Characteristics N Channel (Ta = 25°C)
Item
———————————————————————————————————————————
Gate to source leak current
———————————————————————————————————————————
———————————————————————————————————————————
resistance
———————————————————————————————————————————
Forward transfer admittance
Output capacitance
————————————————————————————————
———————————————————————————————————————————
Turn–on delay time
————————————————————————————————
————————————————————————————————
————————————————————————————————
recovery time
———————————————————————————————————————————
6AM14
Drain to source breakdown
voltage
———————————————————————————————————————————
Gate to source breakdown
voltage
———————————————————————————————————————————
Zero gate voltage drain current
Gate to source cutoff voltage
———————————————————————————————————————————
Static drain to source on state
———————————————————————————————————————————
Input capacitance
————————————————————————————————
Reverse transfer capacitance
Rise time
Turn–off delay time
Fall time
———————————————————————————————————————————
Body–drain diode forward
voltage
———————————————————————————————————————————
Body–drain diode reverse
* Pulse Test
Symbol
V
I
|y
Ciss
Coss
Crss
t
t
t
t
V
t
V
I
V
R
GSS
DSS
d(on)
r
d(off)
f
rr
(BR)DSS
DF
(BR)GSS
GS(off)
DS(on)
fs
|
Min
60
±20
—
—
0.5
—
————————————————————————
—
4.0
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
0.14
0.22
6.5
500
240
30
15
90
110
250
1.0
170
Max
—
—
±10
250
1.5
0.2
0.5
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
V
I
V
V
f = 1 MHz
V
diF / dt = 50 A / µs
Test conditions
I
V
V
V
I
I
V
V
R
I
I
D
G
D
D
D
F
F
GS
DS
DS
GS
GS
DS
DS
GS
GS
L
= 7A, V
= 7A, V
= 10 mA, V
= 4 A
= ±100 µA, V
= 4A
= 2A
= 7.5
= 50 V, V
= 10 V, I
= 4V *
= 10 V *
= 10 V
= 10 V, I
= ±16 V, V
= 2.5V *
= 0
GS
GS
D
D
= 0
= 0
GS
GS
= 1 mA
= 4 A
DS
DS
= 0
= 0
= 0
= 0