k6t1008c2c-tb70 Samsung Semiconductor, Inc., k6t1008c2c-tb70 Datasheet - Page 4

• Manufacturer Part Number: k6t1008c2c-tb70
• Description: 128k X8 Bit Low Power Cmos Static Ram
• Manufacturer: Samsung Semiconductor, Inc.

DC AND OPERATING CHARACTERISTICS
RECOMMENDED DC OPERATING CONDITIONS
Note
1. Commercial Product : T
2. Overshoot : Vcc+3.0V for 30ns pulse width.
3. Undershoot : -3.0V for 30ns pulse width.
4. Overshoot and undershoot are sampled, not 100% tested.
K6T1008C2C Family
CAPACITANCE
1. Capacitance is sampled not, 100% tested.
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby
Current
(CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
K6T1008C2C-L
K6T1008C2C-B
K6T1008C2C-P
K6T1008C2C-F
Item
Item
Item
1
A
)
=0 to 70 C and Industrial Product :T
(f=1MHz, T
Symbol
I
I
V
V
I
I
I
CC1
CC2
I
SB1
I
LO
CC
SB
A
OH
LI
OL
=25 C)
Symbol
V
CS
I
Cycle time=1 s, 100% duty, I
CS
Cycle time=Min, 100% duty, I
I
I
CS
CS
or CS
Other input =0~Vcc
IO
OL
OH
Vcc
Vss
IN
V
V
=0mA, CS
=2.1mA
IH
=Vss to Vcc
1
2
=-1.0mA
1
1
IL
Symbol
=V
=V
V
Vcc-0.2V, CS2 Vcc-0.2V
2
C
C
IH
CC
IH,
IN
IO
0.2V
or CS
-0.2V, V
CS
1
2
A
=V
=V
=-40 to 85 C, otherwise specified.
2
=V
IL
IL,
IN
, CS
IL
Other input=V
0.2V or V
or OE=V
-0.5
Min
4.5
2.2
Test Condition
2
Test Conditions
0
=V
4
3)
IO
V
V
IH
=0mA, CS1=V
IO
IN
, V
1)
IO
=0V
=0V
IH
IN
IN
=0mA, CS
or WE=V
=V
V
IL
CC
IH
or V
-0.2V
or V
IH
IL
IL,
Low Power
Low Low Power
Low power
Low Low Power
Typ
, CS2=V
5.0
IL
1
0
-
-
, Read
V
0.2V,
IO
=Vss to Vcc
IH,
Min
V
IN
-
-
=V
Read
IL
Write
or V
Vcc+0.5
Max
5.5
0.8
IH
0
CMOS SRAM
Min
2.4
Max
-1
-1
2)
-
-
-
-
-
-
-
-
-
6
8
Typ
0.3
0.3
20
45
November 1997
5
2
1
1
-
-
-
-
-
Revision 2.0
Max Unit
Unit
0.4
10
35
60
50
10
50
15
1
1
5
3
V
V
V
V
-
Unit
pF
pF
mA
mA
mA
mA
V
V
A
A
A