km29u64000it Samsung Semiconductor, Inc., km29u64000it Datasheet - Page 25
km29u64000it
Manufacturer Part Number
km29u64000it
Description
8m X 8 Bit Nand Flash Memory
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.KM29U64000IT.pdf
(26 pages)
Figure 11. AC Waveforms for Power Transition
DATA PROTECTION
The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector
disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at V
during power-up and power-down as shown in Figure 11. The two step command sequence for program/erase provides additional
software protection.
READY/BUSY
The device has a R/B output that provides a hardware method of indicating the completion of a page program, erase and random
read completion. The R/B pin is normally high but transitions to low after program or erase command is written to the command reg-
ister or random read is started after address loading. It returns to high when the internal controller has finished the operation. The pin
is an open-drain driver thereby allowing two or more R/B outputs to be Or-tied. An appropriate pull-up resister is required for proper
operation and the value may be calculated by the following equation.
KM29U64000T, KM29U64000IT
V
WP
CC
V
CC
GND
Device
~ 2.5V
R/B
open drain output
High
25
where I
R/B pin.
Rp =
L
V
is the sum of the input currents of all devices tied to the
CC
(Max.) - V
I
OL
+ I
OL
L
(Max.)
FLASH MEMORY
=
~ 2.5V
8mA + I
3.2V
L
IL