km29u64000it Samsung Semiconductor, Inc., km29u64000it Datasheet - Page 4

• Manufacturer Part Number: km29u64000it
• Description: 8m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

PRODUCT INTRODUCTION
KM29U64000T, KM29U64000IT
The KM29U64000 is a 66Mbit(69,206,016 bit) memory organized as 16,384 rows by 528 columns. Spare sixteen columns are
located from column address of 512 to 527. A 528-byte data register is connected to memory cell arrays accommodating data trans-
fer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells
that are serially connected to form a NAND structure. Each of the 16 cells resides in a different page. A block consists of the 16
pages formed by one NAND structures, totaling 4,224 NAND structures of 16 cells. The array organization is shown in Figure 2. The
program and read operations are executed on a page basis, while the erase operation is executed on a block basis. The memory
array consists of 1024 separately erasable 8K-byte blocks. It indicates that the bit by bit erase operation is prohibited on the
KM29U64000.
The KM29U64000 has addresses multiplexed into 8 I/O s. This scheme dramatically reduces pin counts and allows systems
upgrades to future densities by maintaining consistency in system board design. Command, address and data are all written through
I/O s by bringing WE to low while CE is low. Data is latched on the rising edge of WE. Command Latch Enable(CLE) and Address
Latch Enable(ALE) are used to multiplex command and address respectively, via the I/O pins. All commands require one bus cycle
except for Block Erase command which requires two cycles: one cycle for erase-setup and another for erase-execution after block
address loading. The 8M byte physical space requires 23 addresses, thereby requiring three cycles for byte-level addressing: col-
umn address, low row address and high row address, in that order. Page Read and Page Program need the same three address
cycles following the required command input. In Block Erase operation, however, only the two row address cycles are used.
Device operations are selected by writing specific commands into the command register. Table 1 defines the specific commands of
the KM29U64000.
Table 1. COMMAND SETS
NOTE : 1. The 00H command defines starting address of the 1st half of registers.
Sequential Data Input
Read 1
Read 2
Read ID
Reset
Page Program
Block Erase
Read Status
2. The 50h command is valid only when the SE(pin 40) is low level.
Function
The 01H command defines starting address of the 2nd half of registers.
After data access on the 2nd half of register by the 01h command, the status pointer is
automatically moved to the 1st half register(00h) on the next cycle.
1st. Cycle
00h/01h
50h
FFh
80h
90h
10h
60h
70h
(2)
(1)
2nd. Cycle
4
D0h
-
-
-
-
-
-
-
Acceptable Command during Busy
FLASH MEMORY
O
O