km29u128t Samsung Semiconductor, Inc., km29u128t Datasheet - Page 2

• Manufacturer Part Number: km29u128t
• Description: 16m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

CLE
ALE
N.C
N.C
N.C
N.C
N.C
R/B
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
N.C
N.C
N.C
N.C
NOTE : Connect all V
16M x 8 Bit NAND Flash Memory
FEATURES
WE
WP
KM29U128T, KM29U128IT
PIN CONFIGURATION
RE
CE
SE
- Memory Cell Array : (16M + 512K)bit x 8bit
- Data Register : (512 + 16)bit x8bit
- Page Program : (512 + 16)Byte
- Block Erase : (16K + 512)Byte
- Random Access : 10 s(Max.)
- Serial Page Access : 50ns(Min.)
- Program time : 200 s(typ.)
- Block Erase time : 2ms(typ.)
- Program/Erase Lockout During Power Transitions
- Endurance : 1M Program/Erase Cycles
- Data Retention : 10 years
Voltage supply : 2.7V~3.6V
Organization
Automatic Program and Erase
528-Byte Page Read Operation
Fast Write Cycle Time
Command/Address/Data Multiplexed I/O port
Hardware Data Protection
Reliable CMOS Floating-Gate Technology
Command Register Operation
Package : 48 - pin TSOP Type1 - 12 x 20 / 0.5 mm pitch
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
1
2
3
4
5
6
7
8
9
Do not leave V
CC
Standard Type
12mm x 20mm
48-pin TSOP1
CC
and V
or V
SS
SS
disconnected.
pins of each device to common power supply outputs.
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
N.C
N.C
N.C
N.C
I/O7
I/O6
I/O5
I/O4
N.C
N.C
N.C
Vcc
Vss
N.C
N.C
N.C
I/O3
I/O2
I/O1
I/O0
N.C
N.C
N.C
N.C
2
GENERAL DESCRIPTION
The KM29U128 is a 16M(16,777,216)x8bit NAND Flash Mem-
ory with a spare 512K(524,288)x8bit. Its NAND cell provides
the most cost-effective solution for the solid state mass storage
market. A program operation programs the 528-byte page in
typically 200 s and an erase operation can be performed in typ-
ically 2ms on a 16K-byte block. Data in the page can be read
out at 50ns cycle time per byte. The I/O pins serve as the ports
for address and data input/output as well as command inputs.
The on-chip write controller automates all program and erase
functions including pulse repetition, where required, and inter-
nal verify and margining of data. Even the write-intensive sys-
tems can take advantage of the KM29U128 s extended
reliability of 1,000,000 program/erase cycles by providing either
ECC(Error Correcting Code) or real time mapping-out algo-
rithm. These algorithms have been implemented in many mass
storage applications and also the spare 16 bytes of a page
combined with the other 512 bytes can be utilized by system-
level ECC.
The KM29U128 is an optimum solution for large nonvolatile
storage applications such as solid state file storage, digital
voice recorder, digital still camera and other portable applica-
tions requiring non-volatility.
PIN DESCRIPTION
I/O
Pin Name
0
CLE
ALE
V
N.C
WE
WP
R/B
V
CE
RE
SE
~ I/O
CC
SS
7
Data Input/Outputs
Command Latch Enable
Address Latch Enable
Chip Enable
Read Enable
Write Enable
Write Protect
Spare area Enable
Ready/Busy output
Power(+2.7V~3.6V)
Ground
No Connection
FLASH MEMORY
Pin Function