km29u128t Samsung Semiconductor, Inc., km29u128t Datasheet - Page 6

• Manufacturer Part Number: km29u128t
• Description: 16m X 8 Bit Nand Flash Memory
• Manufacturer: Samsung Semiconductor, Inc.

ABSOLUTE MAXIMUM RATINGS
NOTE :
1. Minimum DC voltage is -0.3V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, KM29U128T
DC AND OPERATING CHARACTERISTICS
KM29U128T, KM29U128IT
Voltage on any pin relative to V
Temperature Under Bias
Storage Temperature
Short Circuit Output Current
Stand-by Current(TTL)
Stand-by Current(CMOS)
Input Leakage Current
Output Leakage Current
Input High Voltage
Input Low Voltage, All inputs
Output High Voltage Level
Output Low Voltage Level
Output Low Current(R/B)
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Supply Voltage
Supply Voltage
Operating
Maximum DC voltage on input/output pins is V
Current
Parameter
Sequential Read
Program
Erase
Parameter
Parameter
SS
KM29U128IT
KM29U128T
Symbol
:
T
V
V
CC
A
=0 to 70 C, KM29U128IT
CC
SS
Symbol
I
+0.3V which, during transitions, may overshoot to V
OL
I
I
I
I
I
V
V
CC
CC
CC
V
SB
SB
I
V
(R/B)
I
LO
OH
LI
OL
IH
IL
1
2
3
1
2
tcycle=50ns
CE=V
CE=V
V
V
I
I
V
OH
OL
IN
OUT
OL
=2.1mA
=-400 A
=0 to 3.6V
=0.4V
=0 to 3.6V
IH
CC
Symbol
Min
(Recommended operating conditions otherwise noted.)
2.7
, WP=SE=0V/V
T
0
T
V
-0.2, WP=SE=0V/V
V
I
Test Conditions
BIAS
STG
OS
6
CC
IN
:
T
A
CE=V
=-40 to 85 C)
-
-
-
-
IL
CC
, I
OUT
Typ.
3.3
0
CC
=0mA
-0.6 to + 4.6
-0.6 to + 4.6
-10 to +125
-40 to +125
-65 to +150
Rating
CC
5
+2.0V for periods <20ns.
Min
-0.3
2.0
2.4
8
-
-
-
-
-
-
-
-
FLASH MEMORY
Max
3.6
0
Typ
10
10
10
10
10
-
-
-
-
-
-
-
V
CC
Max
0.8
0.4
20
20
20
50
1
10
10
-
-
Unit
+0.3
mA
V
C
C
Unit
V
V
Unit
mA
mA
V
A