bgy282-n NXP Semiconductors, bgy282-n Datasheet - Page 2

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bgy282-n

Manufacturer Part Number
bgy282-n
Description
Bgy282 Dual Band Uhf Amplifier Module For Gsm900 And Gsm1800
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
FEATURES
• Dual band GSM amplifier
• 3.5 V nominal supply voltage
• 33 dBm output power for GSM1800
• 35 dBm output power for GSM900
• Easy output power control by DC voltage
• Internal input and output matching
• Easy band selection by DC voltage
• Suited for GPRS class 12 (duty cycle 4 : 8).
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
DESCRIPTION
The BGY282 is a power amplifier module in a SOT632A
surface mounted ceramic package with a plastic cap.
The module consists of two separated line-ups, one for
GSM900 and one for GSM1800 with internal power
control, input and output matching.
QUICK REFERENCE DATA
RF performance at T
2002 Apr 9
Pulsed; δ = 2 : 8
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
Dual band UHF amplifier module for GSM900 and GSM1800
OPERATION
MODE OF
mb
= 25 °C.
1710 to 1785
880 to 915
(MHz)
f
(V)
3.5
3.5
V
S
2
PINNING - SOT632A
V
≤2.2
≤2.2
(V)
APC
3, 6, 9, 12
PIN
10
11
1
2
4
5
7
8
12
Bottom view
11
(dBm)
typ. 35
typ. 33
1
Fig.1 Simplified outline
P
L
10
2
RF input 1 (GSM900)
V
Ground
V
RF output 1 (GSM900)
RF output 2 (GSM1800)
V
V
RF input 2 (GSM1800)
APC
S1
S2
band
(GSM900)
(GSM1800)
3
9
Preliminary specification
DESCRIPTION
(%)
50
45
η
4
8
BGY282
5
7
MBL253
6
Z
S
(Ω)
50
50
, Z
L

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