bgy2016 NXP Semiconductors, bgy2016 Datasheet - Page 2

• Manufacturer Part Number: bgy2016
• Description: Uhf Amplifier Module
• Manufacturer: NXP Semiconductors

Philips Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
The BGY2016 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
QUICK REFERENCE DATA
RF performance at T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2000 Oct 17
CW
V
V
P
P
T
T
stg
mb
26 V nominal supply voltage
16 W output power into a load of 50
power of 20 mW.
Base station transmitting equipment operating in the
1805 to 1990 MHz frequency band.
S1
S2
D
L
UHF amplifier module
MODE OF OPERATION
SYMBOL
DC supply voltage
DC supply voltage
input drive power
load power
storage temperature
operating mounting base temperature
mb
= 25 C.
PARAMETER
1805 to 1990
(MHz)
f
with an RF drive
V
(V)
5
S1
2
T
PINNING - SOT365A
mb
handbook, halfpage
V
(V)
26
CONDITIONS
= 25 C
S2
Flange
PIN
1
2
3
4
(W)
P
16
L
Fig.1 Simplified outline.
1
RF input
V
V
RF output
ground
4.5
2
30
10
S1
S2
MIN.
(dB)
G
28
p
DESCRIPTION
3
Product specification
5.5
28
120
20
+100
+90
MAX.
4
(%)
30
BGY2016
MSA447
V
V
mW
W
C
C
Z
UNIT
S
( )
50
; Z
L