k7i161884b Samsung Semiconductor, Inc., k7i161884b Datasheet - Page 17

• Manufacturer Part Number: k7i161884b
• Description: 512kx36-bit, 1mx18-bit Ddrii Cio B4 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7I161884B
JTAG AC TEST CONDITIONS
Note: 1. See SRAM AC test output load on page 11.
K7I163684B
JTAG AC Characteristics
JTAG DC OPERATING CONDITIONS
Note: 1. The input level of SRAM pin is to follow the SRAM DC specification
JTAG TIMING DIAGRAM
Input High/Low Level
Input Rise/Fall Time
Input and Output Timing Reference Level
TCK Cycle Time
TCK High Pulse Width
TCK Low Pulse Width
TMS Input Setup Time
TMS Input Hold Time
TDI Input Setup Time
TDI Input Hold Time
SRAM Input Setup Time
SRAM Input Hold Time
Clock Low to Output Valid
Power Supply Voltage
Input High Level
Input Low Level
Output High Voltage(I
Output Low Voltage(I
(SRAM)
TMS
PI
TDO
TCK
TDI
Parameter
Parameter
Parameter
OL
OH
=2mA)
=-2mA)
t
CHCH
t
CLQV
Symbol
Symbol
V
TR/TF
V
V
V
V
V
IH
OH
DD
OL
IH
IL
/V
t
t
t
Symbol
DVCH
IL
MVCH
SVCH
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
t
t
t
t
t
t
t
t
t
t
MVCH
CHMX
CHCH
DVCH
CHDX
SVCH
CHSX
CHCL
CLCH
CLQV
- 17 -
.
Min
-0.3
V
1.7
1.3
1.4
SS
t
t
t
CHMX
CHDX
CHSX
Min
50
20
20
5
5
5
5
5
5
0
t
CHCL
1.8/0.0
1.0/1.0
Min
Typ
0.9
1.8
-
-
-
-
Max
10
-
-
-
-
-
-
-
-
-
V
DD
Max
V
1.9
0.5
0.4
DD
+0.3
t
Rev. 5.0 July 2006
CLCH
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Unit
Unit
ns
V
V
V
V
V
V
V
Note
Note
Note
1