k7i161884b Samsung Semiconductor, Inc., k7i161884b Datasheet - Page 8

• Manufacturer Part Number: k7i161884b
• Description: 512kx36-bit, 1mx18-bit Ddrii Cio B4 Sram
• Manufacturer: Samsung Semiconductor, Inc.

K7I161884B
K7I163684B
Notes: 1. Internal burst counter is fixed as 4-bit linear, i.e. when first address is A0+0, next internal burst address is A0+1.
LINEAR BURST SEQUENCE TABLE
Dcount = 2
2. "LOAD" refers to read new address active status with LD=Low, "LOAD" refers to read new address inactive status with LD=High.
3. "READ" refers to read active read status with R/W=High, "WRITE" refers to write active status with R/W=Low
LOAD
BURST SEQUENCE
Fourth Address
First Address
Dcount = 1
LOAD
READ
Dcount=Dcount+1
READ ADDRESS
INCREMENT
DDR READ
READ
SA
ALWAYS
0
0
1
1
1
Case 1
STATE DIAGRAM
LOAD NEW ADDRESS
SA
0
1
0
1
0
POWER-UP
Dcount = 0
512Kx36 & 1Mx18 DDRII CIO b4 SRAM
NOP
- 8 -
LOAD
SA
0
1
1
0
1
Case 2
LOAD
ALWAYS
SA
1
0
1
0
Dcount=Dcount+1
WRITE ADDRESS
0
WRITE
INCREMENT
DDR WRITE
SA
1
1
0
0
1
Case 3
Dcount = 1
WRITE
LOAD
SA
Rev. 5.0 July 2006
0
1
0
1
0
SA
Dcount = 2
1
0
0
1
1
LOAD
Case 4
SA
1
0
1
0
0