hat2167n Renesas Electronics Corporation., hat2167n Datasheet

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hat2167n

Manufacturer Part Number
hat2167n
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT2167N
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1681-0200 Rev.2.00 May 27, 2008
Page 1 of 6
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
2. Value at Tch = 25°C, Rg
3. Tc = 25
= 4.5 m typ. (at V
RENESAS Package code: PTSP0008DC-A
(Package name: LFPAK-i)
10 s, duty cycle
°
C
4(G)
Item
3(S)
2(S)
1(S)
GS
= 10 V)
1%
50
5(D)
6(D)
7(D)
8(D)
I
D(pulse)
E
Pch
Symbol
I
AP
AR
V
V
Tstg
Tch
ch-C
I
DSS
GSS
I
DR
Note 2
D
Note 2
Note3
Note1
G
4
S S S
D
1 2 3
5
D
6
D
7
–55 to +150
D
8
Ratings
6.25
150
±20
160
30
40
40
20
40
20
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G1681-0200
Source
Gate
May 27, 2008
°
Unit
C/W
mJ
°
°
W
V
V
A
A
A
A
C
C
(Ta = 25°C)
Rev.2.00

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hat2167n Summary of contents

Page 1

... HAT2167N Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 4.5 m typ. ( DS(on) GS Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2(S) 3(S) 4(G) Absolute Maximum Ratings Item Drain to source voltage ...

Page 2

... HAT2167N Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance ...

Page 3

... HAT2167N Main Characteristics Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics 3 4 Drain to Source Voltage V Drain to Source Saturation Voltage vs. Gate to Source Voltage 500 400 300 200 100 Gate to Source Voltage V REJ03G1681-0200 Rev ...

Page 4

... HAT2167N Static Drain to Source on State Resistance vs. Temperature 10 Pulse Test 4 - Case Temperature Body-Drain Diode Reverse Recovery Time 100 50 20 di/dt = 100 0.1 0 Reverse Drain Current I Dynamic Input Characteristics ...

Page 5

... HAT2167N Reverse Drain Current vs. Source to Drain Voltage 0.4 0.8 1.2 Source to Drain Voltage V Avalanche Test Circuit V DS Monitor Rg Vin Switching Time Test Circuit Vin Monitor D.U.T. Rg Vin 10 V REJ03G1681-0200 Rev.2.00 May 27, 2008 Page Pulse Test 1.6 2.0 (V) SD ...

Page 6

... HAT2167N Package Dimensions Package Name JEITA Package Code RENESAS Code LFPAK-i PTSP0008DC-A 4.9 5.3Max 8 1 3.3 1.27 Ordering Information Part No. HAT2167N-EL-E 2500 pcs REJ03G1681-0200 Rev.2.00 May 27, 2008 Page Previous Code MASS[Typ.] LFPAK-iV 0.080g + 0.05 0.25 – 0. 0.05 0.20 – 0.03 0° – 8° 0.75Max 0.10 0.4 ± 0.06 0.25 M Quantity Taping ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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