hat2167n Renesas Electronics Corporation., hat2167n Datasheet - Page 4

• Manufacturer Part Number: hat2167n
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2167N
REJ03G1681-0200 Rev.2.00 May 27, 2008
Page 4 of 6
100
Static Drain to Source on State Resistance
20
10
50
10
50
40
30
20
10
8
6
4
2
0
0.1
-25
0
Pulse Test
V
V
I
10 V
Reverse Drain Current I
D
Case Temperature
DS
GS
Dynamic Input Characteristics
= 30 A
V
0.3
0
Body-Drain Diode Reverse
DD
= 4.5 V
20
Gate Charge Qg (nc)
= 25 V
25
vs. Temperature
10 V
Recovery Time
5 V
1
V
40
50
DD
3
= 25 V
di/dt = 100 A/ s
V
GS
10 V
75
10 A, 20 A, 50 A
5 V
60
I
= 0, Ta = 25 C
D
10
= 50 A
100 125 150
Tc
10 A, 20A
DR
V
80
30
GS
( C)
(A)
100
100
20
16
12
8
4
0
10000
3000
1000
1000
300
100
100
300
100
0.3
0.1
30
10
10
30
10
30
3
1
3
1
0.1
0.1
0
Drain to Source Voltage V
V
f = 1 MHz
Forward Transfer Admittance vs.
GS
0.3
0.3
5
Switching Characteristics
Drain to Source Voltage
Typical Capacitance vs.
= 0
Tc = -25 C
Drain Current I
Drain Current I
10
1
Drain Current
1
V
Rg = 4.7 , duty
GS
t d(off)
= 10 V, V
15
3
3
25 C
10
20
10
V
Pulse Test
D
D
DS
DS
(A)
(A)
= 10 V
t d(on)
= 10 V
30
30
DS
1 %
25
75 C
Coss
Crss
Ciss
t r
(V)
t f
100
100
30