hat2185wp Renesas Electronics Corporation., hat2185wp Datasheet

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hat2185wp

Manufacturer Part Number
hat2185wp
Description
Silicon N Channel Power Mos Fet Power Switching
Manufacturer
Renesas Electronics Corporation.
Datasheet
HAT2185WP
Silicon N Channel Power MOS FET
Power Switching
Features
Outline
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW
REJ03G1744-0200 Nov 28, 2008
Page 1 of 6
Low on-resistance
Low drive current
High density mounting
2. Value at Tc = 25 C
3. STch = 25 C, Tch
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
10 s, duty cycle
Item
5
6
150 C
7
8
4
1%
3
2 1
I
I
DR (pulse)
D (pulse)
Symbol
Pch
E
I
AP
AR
V
V
G
Tstg
4
Tch
ch-c
I
GSS
I
DSS
DR
Note3
D
Note3
Note2
Note1
Note1
D
S S S
5 6 7 8
1 2 3
D D D
–55 to +150
Ratings
6.25
150
150
7.5
10
20
10
20
10
20
30
1, 2, 3
4
5, 6, 7, 8 Drain
REJ03G1744-0200
Source
Gate
Nov 28, 2008
Unit
C/W
mJ
W
V
V
A
A
A
A
A
C
C
(Ta = 25°C)
Rev.2.00

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hat2185wp Summary of contents

Page 1

... HAT2185WP Silicon N Channel Power MOS FET Power Switching Features Low on-resistance Low drive current High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current ...

Page 2

... HAT2185WP Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time ...

Page 3

... HAT2185WP Main Characteristics Maximum Safe Operation Area 100 10 1 0.1 Operation in this area is limited by R DS(on) 0. 25°C 1 shot 0.001 10 0.1 1 Drain to Source Voltage Typical Transfer Characteristics Pulse Test 75° Gate to Source Voltage Static Drain to Source on State Resistance vs ...

Page 4

... HAT2185WP Dynamic Input Characteristics (Typical) 240 25°C 180 V DS 120 120 Gate Charge Gate to Source Cutoff Voltage vs. Case Temperature (Typical 0 - Case Temperature REJ03G1744-0200 Nov 28, 2008 ...

Page 5

... HAT2185WP Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Switching Time Test Circuit Vin Monitor D.U.T. 10 Ω Vin 10 V REJ03G1744-0200 Nov 28, 2008 Page θ c( (t) • θ 6.25° 25° 100 m Pulse Width PW (s) ...

Page 6

... HAT2185WP Package Dimensions Package Name JEITA Package Code RENESAS Code − WPAK PWSN0008DA-A 5.1 ± 0.2 1.27Typ 0.635Max 4.9 ± 0.1 Ordering Information Part No. HAT2185WP-EL-E 2500 pcs, 3000 pcs REJ03G1744-0200 Nov 28, 2008 Page Previous Code MASS[Typ.] WPAKV 0.075g 0.8Max 0.04Min 0.2Typ (Ni/Pd/Au plating) Quantity Taping Unit ...

Page 7

Notes: 1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes warranties or representations with respect to the accuracy or completeness of the information contained ...

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