hat2185wp Renesas Electronics Corporation., hat2185wp Datasheet - Page 2

• Manufacturer Part Number: hat2185wp
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2185WP
Electrical Characteristics
Notes: 4. Pulse test
REJ03G1744-0200 Nov 28, 2008
Page 2 of 6
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Item
Symbol
V
R
V
Coss
(BR)DSS
Crss
Ciss
t
t
Qgs
Qgd
|yfs|
I
I
GS(off)
V
DS(on)
Qg
d(on)
d(off)
DSS
GSS
t
t
t
DF
rr
r
f
Min
150
3.0
4.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.17
Typ
430
6.5
9.7
2.7
3.9
0.9
98
24
31
43
90
—
—
—
—
8
8
Max
0.19
4.5
1.4
—
—
—
—
—
—
—
—
—
—
—
—
—
0.1
1
Unit
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
V
S
V
V
A
A
V
I
I
I
V
V
I
V
V
f = 1 MHz
I
V
R
Rg = 10
V
V
I
I
di
D
D
D
D
D
F
F
DS
GS
DS
DS
GS
GS
DD
GS
L
F
= 10 A, V
= 10 A, V
= 10 mA, V
= 5 A, V
= 5 A, V
= 5 A
= 10 A
/dt = 100 A/ s
= 15
= 150 V, V
= 10 V, I
= 25 V
= 30 V, V
= 0
= 10 V
= 120 V
= 10 V
Test conditions
DS
GS
GS
GS
D
= 10 V
= 10 V
GS
= 1 mA
= 0
= 0
GS
DS
= 0
= 0
= 0
Note4
(Ta = 25°C)
Note4
Note4