hat2131r Renesas Electronics Corporation., hat2131r Datasheet - Page 3

• Manufacturer Part Number: hat2131r
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2131R
Main Characteristics
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 3 of 6
0.001
0.01
Static Drain to Source on State Resistance
100
0.1
10
10
5
4
3
2
1
0
8
6
4
2
1
0
0.1
−25
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot
V
Pulse Test
V
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
vs. Temperature (Typical) (1)
Case Temperature
GS
0
Tc = 75°C
= 10 V
= 10 V
1
Operation in this
area is limited by
R
1
DS(on)
25
2
50
10
0.45 A
75
25°C
0.1 A
−25°C
3
I
D
100 125 150
= 0.9 A
Tc (°C)
100
V
V
4
GS
DS
(V)
(V)
1000
5
Static Drain to Source on State Resistance
Static Drain to Source on State Resistance
10
10
5
4
3
2
1
0
8
6
4
2
3
1
0
−25
0.1
0
Drain to Source Voltage
Ta = 25°C
Pulse Test
Ta = 25°C
Pulse Test
V
Pulse Test
Typical Output Characteristics
vs. Temperature (Typical) (2)
Case Temperature
GS
0
vs. Drain Current (Typical)
= 4 V
4
Drain Current
25
8
50
V
GS
1
0.45 A
10 V
75
= 4 V
12
0.1 A
I
D
I
10 V
D
100 125 150
= 0.9 A
4 V
Tc (°C)
(A)
V
16
DS
2.8 V
2.6 V
2.4 V
3 V
(V)
20
10