hat2131r Renesas Electronics Corporation., hat2131r Datasheet - Page 4

• Manufacturer Part Number: hat2131r
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2131R
REJ03G1815-0100 Rev.1.00 Jul 17, 2009
Page 4 of 6
1000
100
800
600
400
200
2.5
2.0
1.5
1.0
0.5
10
0
Dynamic Input Characteristics (Typical)
0
-25
1
0
V
Reverse Drain Current I
I
Ta = 25°C
vs. Case Temperature (Typical)
DS
D
Gate to Source Cutoff Voltage
Case Temperature
Body-Drain Diode Reverse
= 0.9 A
0
Gate Charge
Recovery Time (Typical)
8
I
D
25
V
= 10 mA
DS
= 250 V
16
50
100 V
di / dt = 100 A / µs
V
1 mA
GS
75
V
24
0.1 mA
Qg (nC)
= 0, Ta = 25°C
DS
V
100 125 150
= 100 V
Tc (°C)
DS
250 V
DR
V
= 10 V
32
GS
(A)
40
10
16
12
8
4
0
10000
1000
100
10
5
4
3
2
1
0
1
0
0
Drain to Source Voltage
Source to Drain Voltage V
V
f = 1 MHz
Ta = 25°C
V
Ta = 25 °C
Pulse Test
Source to Drain Voltage (Typical)
GS
GS
Reverse Drain Current vs.
= 0
= 0 V
Drain to Source Voltage
0.2
40
Typical Capacitance vs.
0.4
80
120
0.6
160
V
0.8
DS
SD
Coss
Crss
Ciss
(V)
(V)
200
1.0