hat2114r Renesas Electronics Corporation., hat2114r Datasheet - Page 4

• Manufacturer Part Number: hat2114r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2114R, HAT2114RJ
Main Characteristics
Rev.1.00, Oct.06.2003, page 4 of 9
4.0
3.0
2.0
1.0
10
8
6
4
2
0
0
Test condition.
When using the glass epoxy board.
(FR4 40 x 40 x 1.6 mm), (PW
Power vs. Temperature Derating
Drain to Source voltage
Typical Output Characteristics
Case Temperature
2
50
10 V
4 V
4
100
6
V
Ta ( C)
Pulse Test
GS
150
V
= 2.5 V
8
DS
10s)
(V)
3 V
200
10
0.003
0.001
0.03
0.01
100
0.3
0.1
30
10
10
3
1
0.1
Note 6: When using the glass epoxy board
8
6
4
2
0
Operation in
this area is
limited by R
Ta = 25°C
1 shot Pulse
1 Drive Operation
Typical Transfer Characteristics
Maximum Safe Operation Area
V
Pulse Test
Gate to Source Voltage
0.3
Drain to Source Voltage
DS
(FR4 40
1
= 10 V
Tc = 75°C
DS(on)
1
2
40
3
3
1.6 mm)
10
25°C
−25°C
30
V
V
4
DS
GS
(V)
(V)
100
5