hat2114r Renesas Electronics Corporation., hat2114r Datasheet - Page 5

• Manufacturer Part Number: hat2114r
• Description: Silicon N Channel Power Mos Fet High Speed Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2114R, HAT2114RJ
Rev.1.00, Oct.06.2003, page 5 of 9
0.10
0.08
0.06
0.04
0.02
0.3
0.2
0.1
Static Drain to Source on State Resistance
-40
0
0
Drain to Source Saturation Voltage vs.
V
Pulse Test
Gate to Source Voltage
GS
Case Temperature
10 V
Gate to Source Voltage
= 4.5 V
0
5
vs. Temperature
40
10
80
Tc
Pulse Test
15
1, 2, 5 A
V
1, 2 ,5A
120
I
GS
D
( C)
= 5 A
2 A
1 A
(V)
160
20
0.05
0.02
0.01
1.0
0.5
0.2
0.1
0.5
50
20
10
Static Drain to Source on State Resistance
5
2
1
0.1
1
Tc = -25°C
V
Forward Transfer Admittance vs.
GS
0.3
= 4.5 V
Drain Current I
3
Drain Current I
10 V
vs. Drain Current
1
Drain Current
10
3
75°C
25°C
D
10
D
V
Pulse Test
Pulse Test
(A)
30
DS
(A)
= 10 V
30
100
100