hat2116h Renesas Electronics Corporation., hat2116h Datasheet - Page 3

• Manufacturer Part Number: hat2116h
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2116H
Main Characteristics
Rev.4.00 Sep 07, 2005 page 3 of 6
0.20
0.16
0.12
0.08
0.04
40
30
20
10
50
40
30
20
10
0
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Power vs. Temperature Derating
Typical Output Characteristics
Case Temperature
Gate to Source Voltage
2
4
4.5 V
10 V
50
4 V
8
4
100
12
6
Tc (°C)
150
Pulse Test
Pulse Test
V
V
V
I
GS
16
D
8
GS
DS
= 10 A
2 A
= 3 V
5 A
3.5 V
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
50
40
30
20
10
50
20
10
1
0
5
2
1
0.1
0.1 0.2 0.5
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
V
Pulse Test
Pulse Test
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
0.3
= 10 V
Drain Current
1
Tc = 75°C
vs. Drain Current
1
1
DS (on)
V
2
GS
2
10 V
3
= 4.5 V
5
3
I
10
10 20
D
–25°C
25°C
(A)
V
V
4
30
GS
DS
50
(V)
(V)
100
100
5