hat2116h Renesas Electronics Corporation., hat2116h Datasheet - Page 5

• Manufacturer Part Number: hat2116h
• Description: Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2116H
Rev.4.00 Sep 07, 2005 page 5 of 6
Vin
10 V
Vin Monitor
Rg
Switching Time Test Circuit
0.03
0.01
0.3
0.1
10 µ
3
1
D = 1
0.5
D.U.T.
Normalized Transient Thermal Impedance vs. Pulse Width
100 µ
R
V
= 10 V
L
DS
Vout
Monitor
50
40
30
20
10
0
0
Source to Drain Voltage
1 m
Reverse Drain Current vs.
0.4
Source to Drain Voltage
Pulse Width PW (S)
10 V
5 V
0.8
10 m
V
GS
1.2
t d(on)
=
Vout
Vin
0
P
θch – c (t) = γ s (t) • θch – c
θch – c = 8.33°C/W, Tc = 25°C
DM
Pulse Test
V
1.6
SD
100 m
Switching Time Waveform
10%
10%
(V)
2.0
90%
PW
t r
T
1
t d(off)
Tc = 25°C
D =
90%
PW
T
90%
10
10%
t f