hat2071r Renesas Electronics Corporation., hat2071r Datasheet - Page 3

• Manufacturer Part Number: hat2071r
• Description: Mosfets Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2071R
Main Characteristics
Rev.4.00 Sep 07, 2005 page 3 of 6
4.0
3.0
2.0
1.0
0.5
0.4
0.3
0.2
0.1
20
16
12
0
8
4
0
0
Drain to Source Saturation Voltage vs.
0
0
0
Drain to Source Voltage
Gate to Source Voltage
Test Condition:
Power vs. Temperature Derating
Ambient Temperature
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Typical Output Characteristics
10 V
4 V
5 V
Gate to Source Voltage
2
4
50
8
4
100
3.5 V
12
6
V
150
Pulse Test
Pulse Test
GS
Ta (°C)
V
V
I
16
D
8
GS
DS
= 2.5 V
= 10 A
3 V
5 A
2 A
(V)
(V)
200
10
20
0.01
500
100
100
0.1
Static Drain to Source on State Resistance
10
20
16
12
50
20
10
1
8
4
0
5
2
1
0.1
0.1 0.2 0.5
0
Drain to Source Voltage
Gate to Source Voltage
Ta = 25°C
1 shot Pulse
Operation in
this area is
limited by R
V
Pulse Test
Note 4:
Typical Transfer Characteristics
Maximum Safe Operation Area
DS
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.3
Tc = 75°C
= 10 V
Drain Current
1
vs. Drain Current
1
1
DS (on)
V
2
GS
2
10 V
3
= 4.5 V
5
–25°C
3
I
10
10 20
25°C
D
Pulse Test
(A)
V
V
4
30
GS
DS
50
(V)
(V)
100
100
5