hat2071r Renesas Electronics Corporation., hat2071r Datasheet - Page 4

• Manufacturer Part Number: hat2071r
• Description: Mosfets Silicon N Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2071R
Rev.4.00 Sep 07, 2005 page 4 of 6
100
Static Drain to Source on State Resistance
50
40
30
20
10
50
20
10
50
40
30
20
10
0
–40
0
0.1 0.2
0
I
Reverse Drain Current I
Pulse Test
D
Case Temperature
V
Dynamic Input Characteristics
= 10 A
DS
V
Body-Drain Diode Reverse
GS
Gate Charge
10 V
0
4
= 4.5 V
0.5
vs. Temperature
Recovery Time
40
8
1
V
di / dt = 50 A / µs
V
DD
GS
= 25 V
2
2 A, 5 A, 10 A
80
12
I
= 0, Ta = 25°C
10 V
D
V
Qg (nc)
5 V
= 2 A, 5 A
GS
Tc
V
5
DD
DR
120
16
= 25 V
10 A
(°C)
10
10 V
(A)
5 V
160
20
20
20
16
12
8
4
0
10000
3000
1000
200
100
100
100
300
0.3
0.1
50
20
10
30
10
30
10
5
2
3
1
0.1
0.1
0
Drain to Source Voltage V
V
Rg = 4.7 Ω, duty ≤ 1 %
Forward Transfer Admittance vs.
GS
0.2
0.3
= 10 V, V
Switching Characteristics
Typical Capacitance vs.
Drain to Source Voltage
10
Drain Current
Drain Current I
Tc = –25°C
0.5
Drain Current
1
25°C
20
DS
1
t d(on)
= 10 V
Coss
Crss
Ciss
3
2
t d(off)
75°C
30
10
I
D
D
V
Pulse Test
DS
V
f = 1 MHz
5
(A)
(A)
GS
= 10 V
40
t r
30
DS
= 0
10
(V)
t f
100
20
50