hat2202c09 Renesas Electronics Corporation., hat2202c09 Datasheet - Page 2

• Manufacturer Part Number: hat2202c09
• Description: Silicon N Channel Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2202C
Electrical Characteristics
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leakage current
Drain to Source leakage current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to Source charge
Gate to Drain charge
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Body - Drain diode forward voltage
Notes: 3. Pulse test
Rev.5.00 Jan 26, 2006 page 2 of 6
Item
Symbol
V
V
R
V
Coss
(BR)DSS
(BR)GSS
Crss
Ciss
Qgs
Qgd
t
t
I
I
|y
V
GS(th)
DS(on)
Qg
d(on)
d(off)
GSS
DSS
t
t
DF
fs
r
f
|
Min
0.4
6.5
20
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
12
Typ
520
115
9.5
1.4
0.8
31
43
60
28
—
—
—
—
—
6
1
9
8
6
Max
1.4
1.1
40
55
—
—
—
—
—
—
—
—
—
—
—
—
—
10
1
Unit
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
V
S
V
A
A
I
I
V
V
I
I
I
I
V
f = 1 MHz
V
I
I
V
R
I
D
G
D
D
D
D
D
D
F
GS
DS
DS
DD
GS
L
= 3 A, V
= 10 mA, V
= 10 A, V
= 10 V, I
= 1.5 A, V
= 1.5 A, V
= 1.5 A, V
= 3 A
= 1.5 A,
= 6.7 , R
= 10 V, V
= 20 V, V
=
= 10 V, V
= 10 V, V
Test Conditions
10V, V
GS
D
= 1 mA
GS
GS
DS
g
= 0
GS
GS
GS
GS
DD
= 4.7
DS
DS
=4.5 V
= 2.5 V
= 10 V
= 0,
= 0
= 0
= 4.5 V,
=10 V,
Note3
(Ta = 25°C)
= 0
= 0
Note3
Note3
Note3