hat2202c09 Renesas Electronics Corporation., hat2202c09 Datasheet - Page 3

• Manufacturer Part Number: hat2202c09
• Description: Silicon N Channel Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT2202C
Main Characteristics
Rev.5.00 Jan 26, 2006 page 3 of 6
160
120
1.6
1.2
0.8
0.4
80
40
20
16
12
8
4
0
0
Drain to Source Saturation Voltage vs.
0
Drain to Source Voltage V
Gate to Source Voltage V
Power vs. Temperature Derating
Test Condition :
Ambient Temperature
4.5 V
Typical Output Characteristics
When using the glass epoxy board
(FR4 40 x 40 x 1.6 mm)
2.5 V
Gate to Source Voltage
2
2
50
V
GS
4
= 1.2 V
4
100
6
6
Pulse Test
Pulse Test
150
Ta (°C)
8
8
I
GS
DS
D
1.8 V
2.0 V
1.4 V
= 1 A
1.6 V
1.5 A
3 A
(V)
(V)
200
10
10
1000
0.03
100
100
0.01
0.3
0.1
Static Drain to Source on State Resistance
30
10
20
16
12
10
8
3
1
4
0
0.1
PW =10 µs
Drain to Source Voltage V
Gate to Source Voltage V
Pulse Test
Operation in this area
is limited by R
0.03
Typical Transfer Characteristics
75°C
Maximum Safe Operation Area
1
Drain Current I
0.1 0.3
PW = 100 µs
vs. Drain Current
1
DS(on)
25°C
Ta = 25°C,1shot pulse
When using the FR4 board.
2
1
Tc = –25°C
3
3
10
D
V
V
Pulse Test
GS
10
2.5 V
DS
(A)
= 4.5 V
4
GS
DS
= 10 V
30 100
(V)
(V)
100
5