upa1817 Renesas Electronics Corporation., upa1817 Datasheet - Page 2

• Manufacturer Part Number: upa1817
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
2
V
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS ( )
0
TEST CIRCUIT 1 SWITCHING TIME
Duty Cycle
PG.
= 1 s
CHARACTERISTICS
R
1%
G
D.U.T.
R
V
L
DD
V
Wave Form
V
Wave Form
GS
DS
SYMBOL
R
R
R
V
V
| y
t
t
Q
Q
I
I
DS(on)1
DS(on)2
DS(on)3
C
C
GS(off)
C
d(off)
Q
F(S-D)
Q
A
GSS
d(on)
DSS
t
t
t
oss
GS
GD
rr
V
V
fs
iss
rss
r
f
G
rr
V
= 25°C)
GS( )
DS( )
|
0
DS
0
10 %
t
d(on)
90 %
Data Sheet G16253EJ1V0DS
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
V
R
V
V
I
I
I
di/dt = 100 A/ s
D
F
F
DS
GS
DS
DS
GS
GS
GS
DS
GS
DD
GS
DD
GS
G
= 12 A, V
= 12 A, V
t
= 12 A
on
= 10
= 20 V, V
= 10 V, I
= 10 V, I
= 10 V
= 10 V, I
= 16 V
=
= 4.5 V, I
= 4.0 V, I
= 2.5 V, I
= 0 V
= 4.0 V
= 4.0 V
10 % 10 %
t
r
m
V
12 V, V
t
GS
TEST CONDITIONS
d(off)
GS
GS
D
D
D
= 0 V
= 0 V
t
D
D
D
GS
off
= 6.0 A
= 1.0 mA
= 6.0 A
90 %
= 6.0 A
DS
= 6.0 A
= 6.0 A
90 %
= 0 V
t
f
= 0 V
TEST CIRCUIT 2 GATE CHARGE
PG.
MIN.
15
0.5
I
G
= 2 mA
50
TYP.
3100
14.5
0.82
730
450
235
170
230
9.6
5.6
30
10
29
27
12
70
52
1.1
D.U.T.
MAX.
12.5
19.2
m
12
1.0
1.5
10
UNIT
PA1817
m
m
m
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
V
S
V
A
A
R
V
L
DD