upa1817 Renesas Electronics Corporation., upa1817 Datasheet - Page 5

• Manufacturer Part Number: upa1817
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

30
25
20
15
10
1 00 00
5
0
- 0.01
1 00 0
30
25
20
15
10
1 00
5
0
- 0.01
1 0
V
Pulsed
- 0 .01
GS
V
Pulsed
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
GS
= 4.5 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
t
d(off)
= 2.5 V
t
25 C
- 0.1
SWITCHING CHARACTERISTICS
d(on)
t
r
t
- 0.1
f
25 C
- 0 .1
I
I
I
T
D
D
D
75 C
A
- Drain Current - A
- Drain Current - A
- Drain Current - A
75 C
= 125 C
T
A
25 C
= 125 C
- 1
25 C
- 1
- 1
- 10
- 10
V
V
R
- 1 0
D D
G S
G
= 10
=
=
- 100
1 0 V
4 .0 V
Data Sheet G16253EJ1V0DS
- 100
- 1 00
30
25
20
15
10
5
0
- 0.01
10000
1000
0.01
100
100
0.1
10
V
Pulsed
1
GS
- 0.1
0.4
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 4.0 V
V
Pulsed
V
f = 1.0 M H z
GS
G S
- 0.1
25 C
V
V
= 0 V
F(S-D)
= 0 V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
DS
T
0.6
75 C
I
- Drain to Source Voltage - V
A
D
- Source to Drain Voltage - V
= 125 C
- Drain Current - A
- 1
25 C
- 1
0.8
- 10
- 10
1
PA1817
C
C
- 100
C
oss
rss
iss
- 100
1.2
5