upa1814gr-9jg Renesas Electronics Corporation., upa1814gr-9jg Datasheet - Page 4

• Manufacturer Part Number: upa1814gr-9jg
• Description: P-channel Mos Field Effect Transistor For Switching
• Manufacturer: Renesas Electronics Corporation.

4
15
20
35
30
25
25
10
20
50
40
30
15
20
10
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0
0.01
0.01
V
V
GS
GS
T
= 4.0 V
A
= 10 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
= 125 ˚C
V
25 ˚C
75 ˚C
4
GS
25 ˚C
0.1
0.1
- Gate to Source Voltage - V
I
I
D
D
T
- Drain Current - A
- Drain Current - A
A
= 125 ˚C
8
75 ˚C
25 ˚C
25 ˚C
1
1
12
10
10
I
D
= 3.5 A
16
Data Sheet D13804EJ2V0DS
100
100
20
10000
1000
100
10
25
20
15
10
10
30
30
20
5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
0.01
50
1
I
V
D
V
f = 1 MHz
GS
GS
= 3.5 A
= 4.5 V
= 0 V
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
Tch - Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
T
0.1
V
0
A
DS
I
= 125 ˚C
D
- Drain Source Voltage - V
- Drain Current - A
25 ˚C
75 ˚C
25 ˚C
10
1
50
V
GS
100
10
C
= 4.0 V
C
C
oss
iss
rss
4.5 V
10 V
100
100
150
PA1814